Isigaba sokushisa esiphansi se-barium metaborate (β-BaB₂O₄, i-BBO emfushane) ikristalu ingeye-tripartite crystal system, 3m iqembu iphuzu. Ngo-1949, uLevinet al. ithole izinga lokushisa eliphansi lesigaba se-barium metaborate BaB₂O₄ inhlanganisela. Ngo-1968, uBrixneret al. sebenzisa i-BaCl₂ njenge-flux ukuze uthole ikristalu esobala enaliti. Ngo-1969, uHubner wasebenzisa uLi₂O njenge-flux ezokhula ngo-0.5mm×0.5mm×0.5mm futhi ikalwe idatha eyisisekelo yokuminyana, amapharamitha wamaseli neqembu lesikhala. Ngemuva kuka-1982, i-Fujian Institute of Matter Structure, i-Chinese Academy of Sciences yasebenzisa indlela yekristalu enosawoti oncibilikisiwe ukuze kukhule ikristalu eyodwa enkulu ekuguquguqukeni, futhi yathola ukuthi i-BBO crystal iyinto enhle kakhulu ephindwe kabili ye-ultraviolet. Ngohlelo lokusebenza lokushintsha i-electro-optic Q-switch, ikristalu ye-BBO inobubi be-electro-optic coefficient ephansi eholela ku-voltage ephezulu ye-half-wave, kodwa inenzuzo evelele yomkhawulo womonakalo we-laser ophezulu kakhulu.

I-Fujian Institute of Matter Structure, i-Chinese Academy of Sciences yenze uchungechunge lomsebenzi ekukhuleni kwamakristalu e-BBO. Ngo-1985, kwakhuliswa ikristalu eyodwa enosayizi we-φ67mm×14mm. Usayizi wekristalu wafinyelela ku-φ76mm×15mm ngo-1986 kanye no-φ120mm×23mm ngo-1988.

Ukukhula kwamakristalu ngaphezu kwakho konke kusebenzisa indlela ye-molten-salted seed-crystal (eyaziwa nangokuthi indlela ye-top-seed-crystal, indlela yokuphakamisa i-flux, njll.). Izinga lokukhula kwekristalu ku-c-i-axis direction ihamba kancane, futhi kunzima ukuthola icrystal ende yekhwalithi ephezulu. Ngaphezu kwalokho, i-electro-optic coefficient ye-BBO crystal incane uma kuqhathaniswa, futhi ikristalu emfushane isho ukuthi i-voltage ephezulu yokusebenza iyadingeka. Ngo-1995, uGoodnoet al. isebenzise i-BBO njengento ye-electro-optic ye-EO Q-modulation ye-Nd:YLF laser. Ubukhulu bale BBO crystal babungu-3mm×3mm×15mm(x, y, z), futhi kwamukelwa ukuguquguquka okuphambene. Nakuba isilinganiso sobude nobude bale BBO sifinyelela ku-5:1, i-quarter-wave voltage isafika ku-4.6 kV, cishe izikhathi ezingu-5 ze-EO Q-modulation ye-LN crystal ngaphansi kwezimo ezifanayo.

Ukuze kuncishiswe i-voltage yokusebenza, i-BBO EO Q-switch isebenzisa amakristalu amabili noma amathathu ndawonye, ​​okwandisa ukulahlekelwa kokufaka kanye nezindleko. I-Nickelet al. yehlisa i-half-wave voltage ye-BBO crystal ngokwenza ukukhanya kudlule kukristalu izikhathi ezimbalwa. Njengoba kuboniswe emfanekisweni, i-laser beam idlula i-crystal izikhathi ezine, futhi ukubambezeleka kwesigaba okubangelwa isibuko esiphezulu sokubonisa esibekwe ku-45 ° kwanxeshezelwa yi-wave-plate ebekwe endleleni ye-optical. Ngale ndlela, i-voltage yamagagasi esigamu yale Switch ye-BBO Q ingaba ngaphansi njengo-3.6 kV.

Umfanekiso 1. I-BBO EO Q-modulation ene-voltage ephansi yesigamu-wave - WISOPTIC

Ngo-2011 Perlov et al. isebenzise i-NaF njenge-flux ukukhulisa ikristalu ye-BBO enobude obungu-50mm ngaphakathic-isiqondiso se-axis, futhi yathola idivayisi ye-BBO EO enosayizi we-5mm×5mm×40mm, futhi ngokufana okubonakalayo okungcono kuno-1×10⁻⁶ cm⁻¹, ehlangabezana nezidingo ze-EO Q-switching applications. Kodwa-ke, umjikelezo wokukhula wale ndlela ungaphezu kwezinyanga ezingu-2, futhi izindleko zisephezulu.

Okwamanje, i-EO coefficient ephansi esebenza kahle ye-BBO crystal nobunzima bokukhulisa i-BBO enosayizi omkhulu nekhwalithi ephezulu kusakhawulela uhlelo lokusebenza lokushintsha lwe-BBO lwe-EO Q. Kodwa-ke, ngenxa yomkhawulo womonakalo we-laser ophezulu kanye nekhono lokusebenza ngokuphindaphinda imvamisa ephezulu, i-BBO crystal isewuhlobo lwe-EO Q-modulation material enenani elibalulekile nekusasa elithembisayo.

Umfanekiso 2. I-BBO EO Q-Shintshela nge-voltage ephansi yesigamu-wave - Kwenziwe yi-WISOPTIC Technology Co., Ltd.